TK4P60D Datasheet, PDF (1/8 Pages) –

TK4P60D
MOSFETs Silicon N-Channel MOS (π-MOS)
1. Applications
• Switching Voltage Regulators
2. Features
(1) Low drain-source on-resistance: R_DS(ON) = 1.4 Ω (typ.)
(2) High forward transfer admittance: |Y_fs| = 2.5 S (typ.)
(3) Low leakage current: I_DSS = 10 µA (max) (V_DS = 600 V)
(4) Enhancement mode: V_th = 2.4 to 4.4 V (V_DS = 10 V, I_D = 1 mA)
3. Packaging and Internal Circuit
1: Gate (G)
2: Drain (D)(Heatsink)
3: Source (S)
DPAK
4. Absolute Maximum Ratings (Note) (T_a = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V_DSS
600
V
Gate-source voltage
V_GSS
±30
Drain current (DC)
Drain current (pulsed)
Power dissipation
Single-pulse avalanche energy
Avalanche current
Reverse drain current (DC)
Reverse drain current (pulsed)
Channel temperature
(T_c = 25)
(Note 1)
(Note 1)
(Note 2)
(Note 3)
(Note 1)
(Note 1)
I_D
I_DP
P_D
E_AS
I_AR
I_DR
I_DRP
T_ch
4
A
16
100
W
158
mJ
4
A
4
16
150

Storage temperature
T_stg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
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