TK12P60W Datasheet, PDF (1/5 Pages) Toshiba Semiconductor – Switching Voltage Regulators

TK12P60W
Silicon N Channel MOS Type (DTMOSᶚ)

Switching Regulator Applications
• Low drain-source ON-resistance : R_{DS (ON)} = 0.256Њ (typ.)
by used to Super Junction Structure : DTMOS
• Easy to control Gate switching
• Enhancement-mode: V_th = 2.7 to 3.7 V (V_DS = 10 V, I_D = 0.6 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
V_DSS
600
V
V_GSS
±30
V
Drain current (Continuous) (Note 1)
I_D
11.5
A
Drain current (Pulsed)
(Note 1)
I_DP
46.0
A
Drain power dissipation (Tc = 25°C)
P_D
100
W
Single pulse avalanche energy
(Note 2)
E_AS
93
mJ
Avalanche current
I_AR
5.8
A
Drain reverse current (Continuous)
(Note 1)
I_DR
11.5
A
Drain reverse current (Pulsed) (Note 1) I_DRP
46.0
A
Channel temperature
T_ch
150
°C
Storage temperature range
T_stg
-55 to 150
°C
6.6 ± 0.2
5.34 ± 0.13
Unit: mm
0.58MAX
1.14MAX
2.29
0.76 ± 0.12
123
1. GATE
2. DRAIN
Ê¢HEAT SINKÊ£
3. SOURCE
JEDEC
⎯
JEITA
⎯
TOSHIBA
2-7K1A
Weight : 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods’’) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
Thermal Characteristics
Internal Connection
Characteristics
Symbol
Max
Unit
2
Thermal resistance, channel to case
R_{th (ch-c)}
1.25
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V_DD = 90 V, T_ch = 25°C (initial), L = 4.83 mH, R_G = 25 Ω, I_AR = 5.8 A
This transistor is an electrostatic-sensitive device. Handle with care.
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