SUD70N03-04P Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 30-V (D-S) 175C MOSFET

PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
0.0043 @ V_GS = 10 V
30
0.0065 @ V_GS = 4.5 V
TO-252
SUD70N03-04P
N-Channel
30 V (D-S) 175 °C MOSFET
I_D (A)^a
33
27
FEATURES
D TrenchFETr Power MOSFET
D 175_C Junction Temperature
D Optimized for Low-Side Synchronous
Rectifier Operation
D 100% R_g Tested
APPLICATIONS
D DC/DC Converters
D Synchronous Rectifiers
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD70N03-04P
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current
Continuous Source Current (Diode Conduction)^a
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_A = 25_C
T_C = 25_C
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
P_D
T_J, T_stg
30
"20
33
70^b
100
8.3^a
88
8.3^a
−55 to 175
Unit
V
A
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes
a. Surface Mounted on FR4 Board, t v 10 sec.
b. Limited by package.
1/5
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
1.2
Maximum
18
50
1.5
Unit
_C/W
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