SUD40N08-16 Datasheet, PDF (1/5 Pages) Vishay Siliconix – N-Channel 80-V (D-S) 175 Degree Celcious MOSFET

SUD40N08-16
N-Channel
80 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (W)
80
0.016 @ V_GS = 10 V
TO-252
I_D (A)
40
FEATURES
D TrenchFETr Power MOSFET
D 175_C Maximum Junction Temperature
D 100% R_g Tested
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD40N08-16
SUD40N08-16—E3 (Lead Free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (T_J = 175_C)^b
Pulsed Drain Current
Continuous Source Current (Diode Conduction)
Avalanche Current
Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
T_C = 25_C
T_C = 125_C
L = 0.1 mH
T_C = 25_C
T_A = 25_C
V_DS
V_GS
I_D
I_DM
I_S
I_AR
E_AR
P_D
T_J, T_stg
80
"20
40
30
60
40
40
80
136^b
3^a
−55 to 175
Unit
V
A
mJ
W
_C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case
Notes
a. Surface Mounted on 1” x1” FR4 Board.
b. See SOA curve for voltage derating.
t v 10 sec
Steady State
Symbol
R_thJA
R_thJC
1/5
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
_C/W
www.freescale.net.cn