SUD35N10 Datasheet, PDF (1/9 Pages) –

SUD35N10-26P
N-Channel
100 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
100
0.026 at V_GS = 10 V
I_D (A)^a
35
Q_g (Typ)
31 nC
TO-252
FEATURES
• TrenchFET^® Power MOSFET
• 100 % UIS Tested
APPLICATIONS
• Primary Side Switch
D
RoHS
COMPLIANT
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD35N10-26P-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
T_C = 25 °C
Continuous Drain Current (T_J = 175 °C)
T_C = 70 °C
T_A = 25 °C
I_D
T_A = 70 °C
Pulsed Drain Current
I_DM
Continuous Source-Drain Diode Current
T_C = 25 °C
T_A = 25 °C
I_S
Avalanche Current Pulse
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
T_C = 25 °C
Maximum Power Dissipation
T_C = 70 °C
T_A = 25 °C
P_D
T_A = 70 °C
Operating Junction and Storage Temperature Range
T_J, T_stg
Limit
100
± 20
35
32
12^{b, c}
10^{b, c}
40
50^e
6.9^{b, c}
33
55
83
58
8.3^{b, c}
5.8^{b, c}
- 55 to 175
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^{b, d}
Maximum Junction-to-Case
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Notes:
a. Based on T_C = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 10 s.
d. Maximum under Steady State conditions is 50 °C/W.
e. Calculated based on maximum junction temperature. Package limitation current is 50 A.
Typical
15
1.5
Maximum
18
1.8
Unit
V
A
mJ
W
°C
Unit
°C/W
1/9
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