SUD25N15 Datasheet, PDF (1/7 Pages) –

SUD25N15-52
N-Channel
150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω)
150
0.052 at V_GS = 10 V
0.060 at V_GS = 6 V
I_D (A)
25
23
TO-252
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
• PWM Optimized
• 100 % R_g Tested
APPLICATIONS
• Primary Side Switch
D
Drain Connected to Tab
GDS
Top View
Ordering Information:
SUD25N15-52-E3 (Lead (Pb)- free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_A = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
Gate-Source Voltage
V_DS
150
V
V_GS
± 20
Continuous Drain Current (T_J = 175 °C)^b
T_C = 25 °C
T_C = 125 °C
I_D
25
14.5
Pulsed Drain Current
I_DM
50
A
Continuous Source Current (Diode Conduction)
I_S
25
Avalanche Current
I_AR
25
Repetitive Avalanche Energy (Duty Cycle ≤ 1 %)
L = 0.1 mH
E_AR
31
mJ
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
136^b
3^a
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Junction-to-Ambient^a
Junction-to-Case (Drain)
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
b. See SOA curve for voltage derating.
t ≤ 10 s
Steady State
Symbol
R_thJA
R_thJC
Typical
15
40
0.85
Maximum
18
50
1.1
Unit
°C/W
1/7
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