SUD23N06 Datasheet, PDF (1/6 Pages) –

SUD23N06-31L
N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
60
0.031 at V_GS = 10 V
0.045 at V_GS = 4.5 V
I_D (A)^a
23
19.5
FEATURES
• TrenchFET^® Power MOSFET
• 175 °C Junction Temperature
Available
RoHS*
COMPLIANT
TO-252
D
GDS
Top View
Drain Connected to Tab
Ordering Information: SUD23N06-31L
SUD23N06-31L-E3 (Lead (Pb)-free)
G
S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T_C = 25 °C, unless otherwise noted
Parameter
Symbol
Limit
Unit
Gate-Source Voltage
V_GS
± 20
V
Continuous Drain Current (T_J = 175 °C)^b
T_C = 25 °C
T_C = 100 °C
I_D
23
16.5
Pulsed Drain Current
I_DM
50
A
Continuous Source Current (Diode Conduction)
I_S
23
Avalanche Current
I_AS
20
Single Avalanche Energy (Duty Cycle ≤ 1 %)
L = 0.1 mH
E_AS
20
mJ
Maximum Power Dissipation
T_C = 25 °C
T_A = 25 °C
P_D
100
3^a
W
Operating Junction and Storage Temperature Range
T_J, T_stg
- 55 to 175
°C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Maximum Junction-to-Case
Notes:
a. Surface Mounted on 1" x 1" FR4 board, t ≤ 10 sec.
t ≤ 10 sec
Steady State
Symbol
R_thJA
R_thJC
Typical
18
40
3.2
Maximum
22
50
4
Unit
°C/W
1/6
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