|
SQR40N10-25 Datasheet, PDF (1/8 Pages) – | |||
|
PRODUCT SUMMARY
VDS (V)
RDS(on) (ï) at VGS = 10 V
RDS(on) (ï) at VGS = 4.5 V
ID (A)
Configuration
TO-252
Reverse Lead DPAK
100
0.025
0.029
40
Single
D
SQR40N10-25
Automotive N-Channel
100 V (D-S) 175 °C MOSFET
FEATURES
⢠TrenchFET® Power MOSFET
⢠Package with Low Thermal Resistance
⢠100 % Rg and UIS Tested
⢠AEC-Q101 Qualified
⢠Material categorization:ï
For definitions of compliance please see
www.freescale.net.cn
G
GDS
Top View
Drain Connected to Tab
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
S
N-Channel MOSFET
TO-252 Reverse Lead DPAK
SQR40N10-25-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
VGS
TC = 25 °Ca
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
100
± 20
40
26
40
160
40
80
136
45
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ï£ 300 μs, duty cycle ï£ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
50
1.1
UNIT
V
A
mJ
W
°C
UNIT
°C/W
1/8
www.freescale.net.cn
|
▷ |