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SQD50P04-13L Datasheet, PDF (1/9 Pages) – | |||
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SQD50P04-13L
Automotive P-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
VDS (V)
RDS(on) (ï) at VGS = - 10 V
RDS(on) (ï) at VGS = - 4.5 V
ID (A)
Configuration
TO-252
- 40
0.013
0.022
- 50
Single
S
G
FEATURES
⢠Halogen-free According to IEC 61249-2-21
Definition
⢠TrenchFET® Power MOSFET
⢠Package with Low Thermal Resistance
⢠100 % Rg and UIS Tested
⢠Compliant to RoHS Directive 2002/95/EC
⢠AEC-Q101 Qualifiedd
GDS
Top View
Drain Connected to Tab
D
P-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD50P04-13L-GE3
ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
Continuous Drain Current
VGS
TC = 25 °Ca
TC = 125 °C
ID
Continuous Source Current (Diode Conduction)a
IS
Pulsed Drain Currentb
IDM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
IAS
EAS
Maximum Power Dissipationb
TC = 25 °C
TC = 125 °C
PD
Operating Junction and Storage Temperature Range
TJ, Tstg
LIMIT
- 40
± 20
- 50
- 35
- 50
- 200
- 39
76
83
27
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width ï£ 300 μs, duty cycle ï£ 2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mountc
SYMBOL
RthJA
RthJC
LIMIT
50
1.8
UNIT
V
A
mJ
W
°C
UNIT
°C/W
1/9
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