SQD25N15-52 Datasheet, PDF (1/9 Pages) Vishay Siliconix – Automotive N-Channel 150 V (D-S) 175 °C MOSFET

SQD25N15-52
Automotive N-Channel
150 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
I_D (A)
Configuration
TO-252
150
0.052
25
Single
D
GDS
Top View
Drain Connected to Tab
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
G
S
N-Channel MOSFET
FEATURES
• TrenchFET^® Power MOSFET
• Package with Low Thermal Resistance
• 100 % R_g and UIS Tested
• AEC-Q101 Qualified
• Material categorization:
For definitions of compliance please see
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TO-252
SQD25N15-52-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)^a
I_S
Pulsed Drain Current^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
150
± 20
25
16
50
63
30
45
107
35
- 55 to + 175
UNIT
V
A
mJ
W
°C
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
PCB Mount^c
SYMBOL
R_thJA
R_thJC
LIMIT
50
1.4
UNIT
°C/W
1/9
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