SQD25N06-22L Datasheet, PDF (1/9 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET

SQD25N06-22L
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
R_DS(on) () at V_GS = 4.5 V
I_D (A)
Configuration
TO-252
60
0.022
0.033
25
Single
D
G
GDS
Top View
Drain Connected to Tab
S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Package with Low Thermal Resistance
• 100 % R_g and UIS Tested
• AEC-Q101 Qualified^d
• Compliant to RoHS Directive 2002/95/EC
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TO-252
SQD25N06-22L-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
V_GS
T_C = 25 °C^a
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)^a
I_S
Pulsed Drain Currentb
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
60
± 20
25
20
25
100
24
28
62
20
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Case (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (Fr-4 material).
d. Parametric verification ongoing.
PCB Mount^c
SYMBOL
R_thJA
R_thJC
LIMIT
50
2.4
UNIT
V
A
mJ
W
°C
UNIT
°C/W
1/9
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