SQ4936EY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET

SQ4936EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
R_DS(on) () at V_GS = 4.5 V
I_D (A)
Configuration
30
0.036
0.053
7
Dual
SO-8
D₁
D₂
S₁ 1
G₁ 2
S₂ 3
G₂ 4
Top View
8 D1
7 D1 G₁
6 D₂
5 D2
S₁
N-Channel MOSFET
G₂
S₂
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Package with Low Thermal Resistance
• 100 % R_g and UIS Tested
• AEC-Q101 Qualified^c
• Compliant to RoHS Directive 2002/95/EC
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4936EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current^a
I_DM
Single Pulse Avalanche Energy
Single Pulse Avalanche Current
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
30
± 20
7
4
3
28
13
8
3.3
1.1
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
c. Parametric verification ongoing.
PCB Mount^b
SYMBOL
R_thJA
R_thJF
LIMIT
110
45
UNIT
V
A
mJ
W
°C
UNIT
°C/W
1 / 10
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