SQ4920EY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Automotive Dual N-Channel 30 V (D-S) 175 °C MOSFET

SQ4920EY
Automotive Dual N-Channel
30 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
R_DS(on) () at V_GS = 4.5 V
I_D (A) per leg
Configuration
30
0.0145
0.0175
8
Dual
SO-8
D1
D2
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
Top View
8 ^D1
7 ^D1
6 ^D2 ^G1
G2
5 ^D2
S1
S2
N-Channel MOSFET N-Channel MOSFET
FEATURES
• TrenchFET^® Power MOSFET
• AEC-Q101 Qualified^d
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
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ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4920EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)^a
I_S
Pulsed Drain Current^b
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^b
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
30
± 20
8
7.2
4
32
25
31
4.4
1.4
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Package limited.
b. Pulse test; pulse width  300 μs, duty cycle  2 %.
c. When mounted on 1" square PCB (FR-4 material).
d. Parametric verification ongoing.
PCB Mount^c
SYMBOL
R_thJA
R_thJF
LIMIT
110
34
UNIT
V
A
mJ
W
°C
UNIT
°C/W
1 / 10
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