SQ4284EY Datasheet, PDF (1/10 Pages) Vishay Siliconix – Automotive Dual N-Channel 40 V (D-S) MOSFET

SQ4284EY
Automotive Dual N-Channel
40 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) () at V_GS = 10 V
R_DS(on) () at V_GS = 4.5 V
I_D (A)
Configuration
40
0.028
0.032
8
Dual
S_{1 1}
G_{1 2}
S_{2 3}
G_{2 4}
SO-8
Top View
D1
D2
8 ^D1
7 ^D1
6 ^D2 ^G1
G2
5 ^D2
S1
S2
N-Channel MOSFET N-Channel MOSFET
FEATURES
• TrenchFET^® Power MOSFET
• AEC-Q101 Qualified
• 100 % R_g and UIS Tested
• Material categorization:
For definitions of compliance please see
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ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
SO-8
SQ4284EY-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain Current
V_GS
T_C = 25 °C^a
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current^a
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
40
± 20
8
5.4
3.5
32
48
115
3.9
1.3
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width  300 μs, duty cycle  2 %.
b. When mounted on 1" square PCB (FR-4 material).
PCB Mount^b
SYMBOL
R_thJA
R_thJF
LIMIT
120
38
UNIT
V
A
mJ
W
°C
UNIT
°C/W
1 / 10
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