SQ3426EEV Datasheet, PDF (1/11 Pages) Vishay Siliconix – Automotive N-Channel 60 V (D-S) 175 °C MOSFET

SQ3426EEV
Automotive N-Channel
60 V (D-S) 175 °C MOSFET
PRODUCT SUMMARY
V_DS (V)
R_DS(on) (Ω) at V_GS = 10 V
R_DS(on) (Ω) at V_GS = 4.5 V
I_D (A)
Configuration
TSOP-6
Top V iew
3 mm
1
6
2
5
3
4
2.85 mm
Marking Code: 8Axxx
60
0.042
0.063
7
Single
(1, 2, 5, 6) D
(3) G
(4) S
N-Channel MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• TrenchFET^® Power MOSFET
• Typical ESD Protection 800 V
• AEC-Q101 Qualified
• 100 % R_g and UIS Tested
• Compliant to RoHS Directive 2011/65/EU
ORDERING INFORMATION
Package
Lead (Pb)-free and Halogen-free
TSOP-6
SQ3426EEV-T1-GE3
ABSOLUTE MAXIMUM RATINGS (T_C = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain Current
T_C = 25 °C
T_C = 125 °C
I_D
Continuous Source Current (Diode Conduction)
I_S
Pulsed Drain Current^a
I_DM
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I_AS
E_AS
Maximum Power Dissipation^a
T_C = 25 °C
T_C = 125 °C
P_D
Operating Junction and Storage Temperature Range
T_J, T_stg
LIMIT
60
± 20
7
4
6
29
10
5
5
1.6
- 55 to + 175
THERMAL RESISTANCE RATINGS
PARAMETER
Junction-to-Ambient
Junction-to-Foot (Drain)
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. When mounted on 1" square PCB (FR-4 material).
PCB Mount^b
SYMBOL
R_thJA
R_thJF
LIMIT
110
30
UNIT
V
A
mJ
W
°C
UNIT
°C/W
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