MC8810 Datasheet, PDF (1/5 Pages) –

Freescale
AO8 8 10/ MC8 8 10
Dual N-Channel Logical Level MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (OHM)
0.022 @ V_GS = 4.5 V
20 0.030 @ V_GS = 2.5V
0.047 @ V_GS = 1.8V
I_D (A)
6.8
5.8
4.7
•
Low r_DS(on) provides higher efficiency and
extends battery life
TSSOP-8
Top View
D₁
D₂
• Low thermal impedance copper leadframe
D1 1
8 D2
TSSOP-8 saves board space
S1 2
7 S2
G₁
G₂
• Fast switching speed
• High performance trench technology
S1 3
G1 4
6 S2
5
G2
S₁
N-Channel MOSFET
S₂
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
20
V
±12
6.8
5.4
A
±30
Continuous Source Current (Diode Conduction)^a
I_S
1.5
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
1.5
W
1.0
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Symbol Typ
Maximum Junction-to-Ambient^a
t <= 10 sec
R_thJA
72
Steady State
100
Max
83
120
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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