MC6604 Datasheet, PDF (1/7 Pages) –

Freescale
AO6 6 04 / MC6 6 04
N & P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
G1
S2
• Low thermal impedance copper leadframe _G2
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
I_D (A)
0.058 @ VGS = 4.5V
3.7
20
0.082 @ VGS = 2.5V
3.1
0.160 @ VGS = 1.8V
2.2
0.112 @ VGS = -4.5V -2.7
-20 0.172 @ V_GS = -2.5V -2.2
TSOP-6
Top View
0.210 @ VGS = -1.8V -2.0
D₁
S₂
1 6 D1
G₁
G₂
2 5 S1
3 4 D2
S₁
D₂
N-Channel MOSFET P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channe l P-Channe l Units
Drain-Source Voltage
Gate-Source Voltage
VDS
20
-20
V
VGS
±12
±12
Continuous Drain Current^a
TA=25^oC
TA=70^oC
ID
3.7
-2.7
2.9
-2.1
A
Pulsed Drain Current^b
IDM
8
-8
Continuous Source Current (Diode Conduction)^a
IS
1.05
-1.05
A
Power Dissipation^a
TA=25^oC
TA=70^oC
PD
1.15
W
0.7
Operating Junction and Storage Temperature Range TJ, Tstg
-55 to 150
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_thJA
N-Channel
Typ
Max
93
110
130
150
P-Channel
Typ
Max
93
110
130
150
Unit
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
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