MC6602 Datasheet, PDF (1/7 Pages) –

Freescale
AO6 6 02 / MC6 6 02
N & P-Channel 32-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) provides higher efficiency and
G1
extends battery life
S2
• Low thermal impedance copper leadframe _G2
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.063 @ V_GS = 10V
0.090 @ V_GS = 4.5V
-30
0.112 @ V_GS = -10V
0.172 @ V_GS = -4.5V
I_D (A)
3.7
3.1
-2.7
-2.2
TSOP-6
Top View
1 6 D1
2 5 S1
3 4 D2
D₁
G₁
S₁
N-Channel MOSFET
S₂
G₂
D₂
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame ter
Symbol N-Channel P-Channe l Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
30
-30
V
±20
±20
3.7
-2.7
2.9
-2.1
A
8
-8
Continuous Source Current (Diode Conduction)^a
I_S
1.05
-1.05
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
1.15
W
0.7
Operating Junction and Storage Temperature Range T_J, T_stg
-55 to 150
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R_thJA
N-Channel
Typ
Max
93
110
130
150
P-Channel
Typ
Max
93
110
130
150
Unit
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
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