MC6415 Datasheet, PDF (1/5 Pages) –

Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
TSOP-6 saves board space
• Fast switching speed
• High performance trench technology
AO6 41 5/ MC6 41 5
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
90 @ V_GS = -4.5V
-20 130 @ V_GS = -2.5V
150 @ V_GS = -1.8V
I_D (A)
-2.9
-2.5
-2.3
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
-20
V
±12
-2.9
-2.4
A
±16
Continuous Source Current (Diode Conduction)^a
I_S
-1.0
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
T_A=25^oC
T_A=70^oC
P_D
2.0
W
1.3
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Symbol
R_θJA
Maximum
62.5
110
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
www.freescale.net.cn