MC6402AL Datasheet, PDF (1/2 Pages) –

Freescale
AO6 402AL / MC6 402AL
N-Channel 30V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low r_DS(on)
assures minimal power loss and conserves
energy, making this device ideal for use in
power management circuitry. Typical
applications are power switch, power
management in portable and battery-powered
products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Low Gate Charge
• Fast Switch
• Miniature TSOP-6 Surface Mount Package
Saves Board Space
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.032 @ V_GS = 10 V
0.044 @ V_GS = 4.5V
I_D (A)
6.3
5.4
1
6
2
5
3
4
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
V_DS
30
V_GS
±20
T_A=25^oC
T_A=70^oC
I_D
6.3
5.1
I_DM
±30
I_S
1.7
T_A=25^oC
T_A=70^oC
P_D
2.0
1.3
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol Maximum Units
R_THJA
62.5
o_C/W
110
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
www.freescale.net.cn