MC4801 Datasheet, PDF (1/5 Pages) –

Freescale
P-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
• Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
AO4801/MC4801
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
52 @ V_GS = -4.5V
-20
89 @ V_GS = -2.5V
124 @ Vgs = -1.8V
I_D (A)
-4.9
-4.0
-3.6
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (TA = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
VDS
V_GS
TA=25^oC
TA=70^oC
ID
IDM
-20
V
±12
-5.2
-4.1
A
±50
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
IS
-2.1
A
TA=25^oC
TA=70^oC
PD
2.1
W
1.3
TJ, Tstg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parame te r
Maximum Junction-to-Case^a
Maximum Junction-to-Ambient^a
t <= 5 sec
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJC
RθJA
Maximum
40
60
Units
o_C/W
o_C/W
1
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