MC4619 Datasheet, PDF (1/8 Pages) –

Freescale
AO4619/MC4619
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Low side high current DC-DC Converter
applications
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
40 @ V_GS = 4.5V
31 @ V_GS = 10V
-30
80 @ V_GS = -4.5V
52 @ V_GS = -10V
I_D (A)
6.0
6.9
-4.2
-5.2
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol N-Channel P-Channel Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
T_A=25^oC
T_A=70^oC
I_D
I_DM
30
-30
V
±20
±20
6.9
-5.2
5.4
-6.8
A
20
-20
Continuous Source Current (Diode Conduction)^a
I_S
1.3
-1.3
A
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
2.1
2.1
W
1.3
1.3
Operating Junction and Storage Temperature Range T_J, T_stg
-55 to 150
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case^a
t <= 5 sec
Maximum Junction-to-Ambient^a
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJC
R_θJA
Maximum
40
60
Units
o_C/W
o_C/W
1
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