MC4609 Datasheet, PDF (1/4 Pages) –

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AO46^A09^M/ M⁴⁵C²4⁸60^C9
P & N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize
High Cell Density process. Low r_DS(on) assures
minimal power loss and conserves energy, making
this device ideal for use in power management
circuitry. Typical applications are PWMDC-DC
converters, power management in portable and
battery-powered products such as computers,
printers, battery charger, telecommunication power
system, and telephones power system.
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
28 @ V_GS = 4.5V
18 @ V_GS = 10V
-20
250 @ V_GS = -2.5V
170 @ V_GS = -4.5V
I_D (A)
7.2
8.5
-2.6
-3.2
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Miniature SO-8 Surface Mount Package
Saves Board Space
• High power and current handling capability
• Low side high current DC-DC Converter
applications
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8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol N-Channel P-Channel
Drain-Source Voltage
V_DS
30
-20
Gate-Source Voltage
V_GS
Continuous Drain Current^a
T_A=25^oC
T_A=70^oC
I_D
Pulsed Drain Current^b
I_DM
Continuous Source Current (Diode Conduction)^a
I_S
20
-12
10
-3.5
7
-2.3
±50
±50
2.3
-2.1
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
2.1
2.1
1.3
1.3
Operating Junction and Storage Temperature Range
T_J, T_stg
-55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Case^a
t <= 5 sec
Maximum Junction-to-Ambient^a
t <= 5 sec
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_θJC
R_θJA
Maximum
40
60
Units
o_C/W
o_C/W
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