MC4485 Datasheet, PDF (1/3 Pages) –

F^Arⁿe^ae^ls^oc^ga^Ple^ower
P-Channel 40-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
AO448^A5^M/ M⁴⁸C⁴4¹48^P5
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
-40
35 @ V_GS = -10V
45 @ V_GS = -4.5V
I_D (A)
-9.0
-7.2
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
V_DS
-40
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_GS
±20
T_A=25^oC _I
-9.0
T_A=70^oC _D
-7.3
I_DM
±50
Continuous Source Current (Diode Conduction)^a
I_S
-2.1
Power Dissipation^a
T_A=25^oC _P
3.1
T_A=70^oC _D
2.6
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R _θJA
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Maximum
50
92
Units
o_C/W
o_C/W
1
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