MC4456 Datasheet, PDF (1/3 Pages) –

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N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOIC-8 saves board space
• Fast switching speed
• High performance trench technology
AO44^A5^M6/⁴M⁴C³4⁴4^N56
PRODUCT SUMMARY
V_DS (V)
r_DS(on) m(Ω)
30
6 @ V_GS = 4.5V
8 @ V_GS = 2.5V
I_D (A)
18.6
16.1
1
8
2
7
3
6
4
5
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_DS
V_GS
T_A=25^oC
TA=70^oC
I_D
I_DM
I_S
30
V
12
18.6
15.7
A
60
2.9
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
TA=25^oC
TA=70^oC
P_D
3.1
W
2.2
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
t <= 10 sec
Steady State
Symbol
R _θJA
Maximum
40
80
Units
o_C/W
o_C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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