MC3414 Datasheet, PDF (1/5 Pages) –

Freescale
N-Channel 20-V (D-S) MOSFET
These miniature surface mount MOSFETs
utilize a high cell density trench process to
provide low r_DS(on) and to ensure minimal
power loss and heat dissipation. Typical
applications are DC-DC converters and
power management in portable and
battery-powered products such as
computers, printers, PCMCIA cards,
cellular and cordless telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
AO3414/MC3414
/
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
0.047 @ V_GS = 4.5V
20
0.055@ V_GS = 2.5V
0.087@ V_GS = 1.8V
I_D (A)
4.3
4.0
3.2
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Ratings Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_DS
V_GS
TA=25 ^o C
T_A=70^oC
I_D
I_DM
20
V
±8
4.3
3.6
A
10
Continuous Source Current (Diode Conduction)^a
Power Dissipation^a
Operating Junction and Storage Temperature Range
I_S
1.6
A
TA=25 ^o C
T_A=70^oC
P_D
1.3
W
0.9
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambient^a
Notes
t <= 5 sec
Steady-State
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
1
Symbol
R _{T HJA}
M aximum
100
166
Units
o _C/W
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