MC3409 Datasheet, PDF (1/6 Pages) –

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Freescale
Freescale
ower
AO34A0M9/M23C13940P9
P - Channel Logic Level MOSFET
These miniature surface mount MOSFETs
utilize High Cell Density process. Low
r_DS(on) assures minimal power loss and
conserves energy, making this device ideal
for use in power management circuitry.
Typical applications are voltage control
small signal switch, power management in
portable and battery-powered products
such as computer portable electronics and
other battery power application.
•
Low r_DS(on) Provides Higher Efficiency and
Extends Battery Life
• Fast Switch
• Low Gate Charge
• Miniature SOT-23 Surface Mount Package
Saves Board Space
PRODUCT SUMMARY
V_DS (V)
-30
r_DS(on) (Ω)
0.20 @ V_GS = -10 V
0.30 @ V_GS = -4.5V
I_D (A)
-2.1
-1.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parame te r
Symbol Maximum Units
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
Continuous Source Current (Diode Conduction)^a
V_DS
V_GS
TA=25^oC
TA=70^oC
I_D
I_DM
I_S
-30
V
±20
-2.1
-1.7
A
±10
-0.4
A
Power Dissipation^a
Operating Junction and Storage Temperature Range
TA=25^oC
TA=70^oC
P_D
1.25
W
0.8
T_J, T_stg -55 to 150 ^oC
THERMAL RESISTANCE RATINGS
Paramete r
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Symbol
R_{T HJA}
M aximum Units
250
o_C/W
285
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