MC3406 Datasheet, PDF (1/5 Pages) –

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N-Channel 30-V (D-S) MOSFET
These miniature surface mount MOSFETs utilize a
high cell density trench process to provide low
r_DS(on) and to ensure minimal power loss and heat
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
•
Low r_DS(on) provides higher efficiency and
extends battery life
• Low thermal impedance copper leadframe
SOT-23 saves board space
• Fast switching speed
• High performance trench technology
AO34^A06^M/ ²M³C²3²4^N06
PRODUCT SUMMARY
V_DS (V)
r_DS(on) (Ω)
30
0.085 @ V_GS = 10V
0.125 @ V_GS = 4.5V
I_D (A)
2.5
1.7
G
D
S
ABSOLUTE MAXIMUM RATINGS (T_A = 25 ^oC UNLESS OTHERWISE NOTED)
Parameter
Symbol Maximum
Drain-Source Voltage
V_DS
30
Gate-Source Voltage
Continuous Drain Current^a
Pulsed Drain Current^b
V_GS
±20
T_A=25^oC
T_A=70^oC
I_D
2.5
2
I_DM
10
Continuous Source Current (Diode Conduction)^a
I_S
0.46
Power Dissipation^a
T_A=25^oC
T_A=70^oC
P_D
1.25
0.8
Operating Junction and Storage Temperature Range
T_J, T_stg -55 to 150
Units
V
A
A
W
o_C
THERMAL RESISTANCE RATINGS
Parame te r
Maximum Junction-to-Ambient^a
t <= 5 sec
Steady-State
Symbol
R _{T HJA}
Maximum
150
200
Units
o _C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
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