IRFB4310 Datasheet, PDF (1/9 Pages) Inchange Semiconductor Company Limited – isc N-Channel Mosfet Transistor

IRF/B/S/SL4310
Applications
l High Efficiency Synchronous Rectification in SMPS
l Uninterruptible Power Supply
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
Benefits
G
l Worldwide Best R_DS(on) in TO-220
l Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
l Fully Characterized Capacitance and Avalanche
SOA
l Enhanced body diode dV/dt and dI/dt Capability
HEXFET^® Power MOSFET
D _VDSS
R_DS(on) typ.
max.
S ^I_D
51.60m0V:
7.0m:
140A
GDS
TO-220AB
IRFB4310
GDS
D²Pak
IRFS4310
GDS
TO-262
IRFSL4310
Absolute Maximum Ratings
Symbol
Parameter
I_D @ T_C = 25°C
I_D @ T_C = 100°C
I_DM
P_D @T_C = 25°C
Continuous Drain Current, V_GS @ 10V
Continuous Drain Current, V_GS @ 10V
d Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
V_GS
dV/dt
Gate-to-Source Voltage
f Peak Diode Recovery
T_J
T_STG
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Avalanche Characteristics
E_{AS (Thermally limited)}
I_AR
E_AR
e Single Pulse Avalanche Energy
Ù Avalanche Current
g Repetitive Avalanche Energy
Thermal Resistance
Symbol
R_θJC
Parameter
k Junction-to-Case
R_θCS
R_θJA
R_θJA
Case-to-Sink, Flat Greased Surface , TO-220
k Junction-to-Ambient, TO-220
jk Junction-to-Ambient (PCB Mount) , D²Pak
Max.
™ 140
97 ™
550
330
2.2
± 20
14
-55 to + 175
300
x x 10lb in (1.1N m)
980
See Fig. 14, 15, 22a, 22b,
Typ.
–––
0.50
–––
–––
Max.
0.45
–––
62
40
Units
A
W
W/°C
V
V/ns
°C
mJ
A
mJ
Units
°C/W
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