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| AOTF4N90 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – HVMOS Family Report | |||
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AOTF4N90
900V,4A N-Channel MOSFET
General Description
The AOTF4N90 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along
with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply
designs.
Features
VDS
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
1000V@150â
4A
< 3.6â¦
D
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain
TC=25°C
Current
TC=100°C
Pulsed Drain Current C
Avalanche Current C
Repetitive avalanche energy C
Single plused avalanche energy G
Peak diode recovery dv/dt
ID
IDM
IAR
EAR
EAS
dv/dt
TC=25°C
Power Dissipation B Derate above 25oC
PD
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
TJ, TSTG
TL
Parameter
Symbol
Maximum Junction-to-Ambient A,D
RθJA
Maximum Junction-to-Case
RθJC
* Drain current limited by maximum junction temperature.
G
AOTF4N90
900
±30
4*
2.5*
16
2.3
79
158
5
37
0.3
-55 to 150
300
AOTF4N90
65
3.3
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ oC
°C
°C
Units
°C/W
°C/W
1/5
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