AOTF450L Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – Plastic Encapsulated Device

AOTF450L
200V, 5.8A N-Channel MOSFET
General Description
The AOTF450L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
250V@150℃
5.8A
< 0.7Ω
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
G
S
Max
200
±30
5.8*
4.1*
12
1.9
54
108
5
27
0.18
-55 to 175
300
Max
65
5.6
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
1/5
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