AOTF42S60L Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – PACKAGE MARKING DESCRIPTION

AOTF42S60
600V 42A α MOS ^TM Power Transistor
General Description
The AOTF42S60 has been fabricated using the advanced αMOS^TM high voltage process that is designed to deliver
high levels of performance and robustness in switching applications.
By providing low R_DS(on), Q_g and E_OSS along with guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply designs.
Features
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
700V
166A
0.099Ω
40nC
9.2µJ
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
AOTF42S60
AOTF42S60L
600
±30
42*
42*
27*
27*
166
11
234
1345
50
37.9
0.4
0.3
100
20
-55 to 150
300
AOTF42S60
65
2.5
AOTF42S60L
65
3.3
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
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