AOTF4185 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – Plastic Encapsulated Device

AOTF4185
40V P-Channel MOSFET
General Description
The AOTF4185 combines advanced trench MOSFET technology with a low resistance package to provide
extremely low R_DS(ON). This device is ideal for load switch and battery protection applications.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 4.5V)
-40V
-34A
< 16mΩ
< 20mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_D
I_DM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range
T_J, T_STG
Maximum
-40
±20
-34
-27
-100
-42
88
33
16
-55 to 175
Thermal Characteristics
Parameter
Symbol
Typ
Maximum Junction-to-Ambient ^{A D} Steady-State
10
Maximum Junction-to-Case
Steady-State
R_θJC
3
Max
13
4.5
Units
V
V
A
A
mJ
W
°C
Units
°C/W
°C/W
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