AOTF404 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOTF404
N-Channel Enhancement Mode Field
Effect Transistor
General Description
The AOTF404/L uses advanced trench technology and design to provide excellent R_DS(ON) with low gate charge.
This device is suitable for use in high voltage synchronous rectification , load switching and general
purpose applications.
Features
V_DS (V) = 105V
I_D = 26 A
(V_GS =10V)
R_DS(ON) < 28 mΩ (V_GS =10V)
R_DS(ON) < 31 mΩ (V_GS = 6V)
TO-220FL
D
G
DS
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain ^TC^=25°C
Current
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
Avalanche Current ^C
I_AR
Repetitive avalanche energy L=0.1mH ^C
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
Junction and Storage Temperature Range
P_DSM
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case ^B
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
105
±25
26
18
90
5.8
4.5
37
68
43
21
2.2
1.38
-55 to 175
Typ
10
48.5
2.9
Max
12
58
3.5
1/6
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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