AOTF22N50 Datasheet, PDF (1/6 Pages) Inchange Semiconductor Company Limited – isc N-Channel MOSFET Transistor

AOT22N50/AOTF22N50
500V,22A N-Channel MOSFET
General Description
The AOT22N50 & AOTF22N50 have been fabricated using an advanced high voltage MOSFET process that is
designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing
low R_DS(on), C_iss and C_rss along with guaranteed avalanche capability these parts can be adopted quickly into new
and existing offline power supply designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
600V@150℃
22A
< 0.26Ω
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT22N50
AOTF22N50
Drain-Source Voltage
V_DS
500
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
22
22*
15
15*
88
7
735
1470
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
417
3.3
50
0.4
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT22N50
65
0.5
AOTF22N50
65
--
Maximum Junction-to-Case
R_θJC
0.3
2.5
* Drain current limited by maximum junction temperature.
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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