AOTF20N40 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 400V,20A N-Channel MOSFET

AOTF20N40
400V,20A N-Channel MOSFET
General Description
The AOTF20N40 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline power supply
designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
500@150℃
20A
< 0.25Ω
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOTF20N40
AOTF20N40L
Drain-Source Voltage
V_DS
400
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
20*
20*
13*
13*
54
6
540
1080
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
50
0.4
40
0.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
AOTF20N40
65
2.5
AOTF20N40L
65
3.1
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
1/6
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