AOT9N70 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 700V, 9A N-Channel MOSFET

AOT9N70/AOTF9N70
700V, 9A N-Channel MOSFET
General Description
The AOT9N70 & AOTF9N70 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and
robustness in popular AC-DC applications. By providing low R_DS(on), C_iss and C_rss along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
800V@150℃
9A
< 1.2Ω
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT9N70
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
9
I_D
5.8
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
236
1.8
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT9N70
65
0.5
Maximum Junction-to-Case
R_θJC
0.53
* Drain current limited by maximum junction temperature.
AOTF9N70
700
±30
9*
5.8*
33
3.2
77
154
5
50
0.4
-55 to 150
300
AOTF9N70
65
--
2.5
AOTF9N70L
9*
5.8*
27.8
0.22
AOTF9N70L
65
--
4.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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