AOT7S65 Datasheet, PDF (1/7 Pages) –

AOT7S65/AOB7S65/AOTF7S65
650V 7A α MOS ^TM Power Transistor
General Description
The AOT7S65 & AOB7S65 & AOTF7S65 have been fabricated using the advanced αMOS^TM high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low R_DS(on), Q_g and E_OSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
750V
30A
0.65Ω
9.2nC
2µJ
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT7S65/AOB7S65
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
7
5
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
104
0.8
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
Thermal Characteristics
Parameter
Symbol AOT7S65/AOB7S65
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
R_θJA
65
R_θCS
0.5
Maximum Junction-to-Case
R_θJC
1.2
* Drain current limited by maximum junction temperature.
AOTF7S65
650
±30
7*
5*
30
1.7
43
86
35
0.3
100
20
-55 to 150
300
AOTF7S65
65
--
3.6
AOTF7S65L
7*
5*
27
0.2
AOTF7S65L
65
--
4.7
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
1/7
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