AOT5N100 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 1000V,4A N-Channel MOSFET

AOT5N100/AOTF5N100
1000V,4A N-Channel MOSFET
General Description
The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.By providing low R_DS(on), C_iss
and C_rss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline
power supply designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
1100@150℃
4A
< 4.2Ω
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT5N100
AOTF5N100
Drain-Source Voltage
V_DS
1000
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
4
4*
2.5
2.5*
15
2.8
117
235
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
195
1.6
42
0.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT5N100
65
0.5
AOTF5N100
65
--
Maximum Junction-to-Case
R_θJC
0.64
3
* Drain current limited by maximum junction temperature.
S
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
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