AOT500 Datasheet, PDF (1/7 Pages) Alpha & Omega Semiconductors – N-Channel Enhancement Mode Field Effect Transistor

AOT500L
N-Channel Enhancement Mode Field
Effect Transistor
General Description
AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage
conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET.
The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes
into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode
characteristics, making this device ideal for motor and inductive load control applications.
Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications)
Features
V_DS (V) = Clamped
I_D = 80A (V_GS = 10V)
R_DS(ON) < 5.3 mΩ (V_GS = 10V)
D
D
10Ω
G
SDG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain TC=25°C
Current ^G
T_C=100°C
I_D
Continuous Drain Gate Current
I_DG
Continuouse Gate Source Current
I_GS
Pulsed Drain Current ^C
I_DM
Avalanche Current L=100uH^H
I_AR
Repetitive avalanche energy ^H
E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
Junction and Storage Temperature Range T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Case ^B
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
Maximum
clamped
clamped
80
57
+50
+50
250
50
125
115
58
-55 to 175
Typ
60
0.7
Max
75
1.3
S
Units
V
V
A
mA
A
A
mJ
W
°C
Units
°C/W
°C/W
1/7
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