AOT4N60 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 600V, 4A N-Channel MOSFET

AOT4N60/AOTF4N60
600V, 4A N-Channel MOSFET
General Description
The AOT4N60 & AOTF4N60 have been fabricated using an advanced high voltage MOSFET process that
is designed to deliver high levels of performance and robustness in popular AC-DC applications.
By providing low R_DS(on), C_iss and C_rss along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V_DS (V) = 700V @ 150°C
I_D = 4A
R_DS(ON) < 2.2Ω
(V_GS = 10V)
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT4N60
AOTF4N60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^{C, G}
Repetitive avalanche energy ^{C, G}
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
4
4*
2.5
2.5*
16
2.5
94
188
5
T_C=25°C
Power Dissipation ^B _{Derate above 25}^o_C
P_D
104
35
0.83
0.28
Junction and Storage Temperature Range T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
Thermal Characteristics
Parameter
Symbol
Maximum Junction-to-Ambient ^A,D
R_θJA
Maximum Case-to-Sink ^A
R_θCS
Maximum Junction-to-Case
R_θJC
* Drain current limited by maximum junction temperature.
-50 to 150
300
AOT4N60
65
0.5
1.2
AOTF4N60
65
--
3.6
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
1/6
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