AOT3N60 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 2.5A, 600V N-Channel MOSFET

AOT3N60
600V,2.5A N-Channel MOSFET
General Description
The AOT3N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC- DC applications.By providing low R_DS(on), C_iss and C_rss
along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power
supply designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
700V@150℃
2.5A
<3.5Ω
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
2.5
1.9
Pulsed Drain Current ^C
I_DM
8
Avalanche Current ^C
I_AR
2
Repetitive avalanche energy ^C
E_AR
60
Single pulsed avalanche energy ^G
E_AS
120
Peak diode recovery dv/dt
dv/dt
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
83
0.7
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
-55 to 150
300
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
Typical
54
-
Maximum
65
0.5
Maximum Junction-to-Case
R_θJC
1.2
1.5
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
1/5
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