AOT2918L Datasheet, PDF (1/7 Pages) –

AOT2918L/AOB2918L/AOTF2918L
100V N-Channel MOSFET
General Description
The AOT2918L & AOB2918L & AOTF2918L uses Trench MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance. Power losses are minimized due to an extremely low
combination of R_DS(ON) and C_rss. _{In addition, switching behavior is well controlled with a}
soft recovery body diode.This device is ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
100V
90A
< 7mΩ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT2918L/AOB2918L
AOTF2918L
Drain-Source Voltage
V_DS
100
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
90
58
70
45
260
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
13
10
Avalanche Current ^C
I_AS, I_AR
35
Avalanche energy L=0.1mH ^C
E_AS, E_AR
61
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
267
133
41
20
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2.1
1.33
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
AOT2918L/AOB2918L
15
60
0.56
AOTF2918L
15
60
3.6
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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