AOT266L Datasheet, PDF (1/7 Pages) –

AOT266L/AOB266L/AOTF266L
60V N-Channel MOSFET
General Description
The AOT266L & AOB266L & AOTF266L uses Trench MOSFET technology that is uniquely optimized to provide
the most efficient high frequency switching performance. Both conduction and switching power losses are
minimized due to an extremely low combination of R_{DS(ON) Ciss and Coss. This device is ideal for boost converters}
and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS=6V)
60V
140A/78A
< 3.5mΩ (< 3.2mΩ^∗)
< 4.0mΩ (< 3.8mΩ^∗)
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT266L/AOB266L
AOTF266L
Drain-Source Voltage
V_DS
60
Gate-Source Voltage
V_GS
±20
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
140
78
110
55
450
Continuous Drain
Current
T_A=25°C
T_A=70°C
I_DSM
18
14
Avalanche Current ^C
I_AS
90
Avalanche energy L=0.1mH ^C
E_AS
405
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
268
134
45.5
22.5
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
2.1
1.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 175
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
AOT266L/AOB266L
15
60
0.56
AOTF266L
15
60
3.3
* Surface mount package TO263
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
1/7
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