AOT264L Datasheet, PDF (1/6 Pages) –

AOT264L/AOB264L
60V N-Channel MOSFET
General Description
The AOT264L/AOB264L combines advanced trench MOSFET technology with a low resistance package to
provide extremely low R_DS(ON).This device is ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backligh ting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
R_DS(ON) (at V_GS = 6V)
60V
140A
< 3.2mΩ
< 3.5mΩ
(< 3.0mΩ^∗)
(< 3.3mΩ^∗)
TO220
D
TO-263
D²PAK
D
S ^DG
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current ^G
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Continuous Drain
T_A=25°C
Current
T_A=70°C
Avalanche Current ^C
Avalanche energy L=0.1mH ^C
I_DSM
I_AS, I_AR
E_AS, E_AR
T_C=25°C
Power Dissipation ^B T_C=100°C
P_D
T_A=25°C
Power Dissipation ^A T_A=70°C
P_DSM
Junction and Storage Temperature Range
T_J, T_STG
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A
Maximum Junction-to-Ambient ^{A D}
Maximum Junction-to-Case
t ≤ 10s
Steady-State
Steady-State
Symbol
R_θJA
R_θJC
* Surface mount package TO263
G
S
Maximum
60
±20
140
110
480
19
15
100
500
333
167
2.1
1.3
-55 to 175
Typ
Max
12
15
48
60
0.35
0.45
D
G
S
Units
V
V
A
A
A
mJ
W
W
°C
Units
°C/W
°C/W
°C/W
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