AOT25S65 Datasheet, PDF (1/7 Pages) –

AOT25S65/AOB25S65/AOTF25S65
600V 20A α MOS ^TM Power Transistor
General Description
The AOT25S65 & AOB25S65 & AOTF25S65 have been fabricated using the advanced αMOS^TM high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low R_DS(on), Q_g and E_OSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
750V
104A
0.19Ω
26.4nC
5.8µC
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT25S65/AOB25S65
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
25
16
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
357
2.9
MOSFET dv/dt ruggedness
Peak diode recovery dv/dt ^H
dv/dt
Junction and Storage Temperature Range
T_J, T_STG
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
Thermal Characteristics
Parameter
Symbol AOT25S65/AOB25S65
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
R_θJA
65
R_θCS
0.5
Maximum Junction-to-Case
R_θJC
0.35
* Drain current limited by maximum junction temperature.
AOTF25S65
650
±30
25*
16*
104
7
96
750
50
0.4
100
20
-55 to 150
300
AOTF25S65
65
--
2.5
AOTF25S65L
25*
16*
40
0.3
AOTF25S65L
65
--
3.1
S
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
1/7
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