AOT20S60 Datasheet, PDF (1/7 Pages) –

AOT20S60/AOB20S60/AOTF20S60
600V 20A α MOS ^TM Power Transistor
General Description
The AOT20S60& AOB20S60 & AOTF20S60 have been fabricated using the advanced αMOS^TM high voltage process that is designed to deliver high levels of
performance and robustness in switching applications. By providing low R_DS(on), Q_g and E_OSS along with guaranteed avalanche capability these parts can be
adopted quickly into new and existing offline power supply designs.
Features
V_DS @ T_j,max
I_DM
R_DS(ON),max
Q_g,typ
E_oss @ 400V
700V
80A
0.199Ω
20nC
4.9µJ
D
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol AOT20S60/AOB20S60 AOTF20S60
Drain-Source Voltage
V_DS
600
Gate-Source Voltage
V_GS
±30
Continuous Drain
Current
T_C=25°C
T_C=100°C
I_D
Pulsed Drain Current ^C
I_DM
Avalanche Current ^C
I_AR
Repetitive avalanche energy ^C
E_AR
Single pulsed avalanche energy ^G
E_AS
20
20*
14
14*
80
3.4
23
188
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
266
50
2.1
0.4
MOSFET dv/dt ruggedness
100
Peak diode recovery dv/dt ^H
dv/dt
20
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds ^J
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT20S60/AOB20S60
65
0.5
AOTF20S60
65
--
Maximum Junction-to-Case
R_θJC
0.47
2.5
* Drain current limited by maximum junction temperature.
AOTF20S60L
20*
14*
37.8
0.3
AOTF20S60L
65
--
3.3
Units
V
V
A
A
mJ
mJ
W
W/ ^oC
V/ns
°C
°C
Units
°C/W
°C/W
°C/W
1/7
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