AOT20N25 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 250V,20A N-Channel MOSFET

AOT20N25
250V,20A N-Channel MOSFET
General Description
The AOT20N25 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high
levels of performance and robustness in popular AC-DC applications.By providing low R_DS(on), C_iss and C_rss along
with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply
designs.This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial
power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
300V@150℃
20A
< 0.17Ω
D
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
V_GS
I_D
I_DM
I_AS
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Maximum Junction-to-Case
Symbol
R_θJA
R_θCS
R_θJC
G
AOT20N25
250
±30
20
14
51
4.5
608
5
208
1.7
-55 to 150
300
AOT20N25
65
0.5
0.6
S
Units
V
V
A
A
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
1/5
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