AOT1N60 Datasheet, PDF (1/5 Pages) Alpha & Omega Semiconductors – 1.3A, 600V N-Channel MOSFET

AOT1N60
600V,1.3A N-Channel MOSFET
General Description
The AOT1N60 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver
high levels of performance and robustness in popular AC- DC applications.By providing low R_DS(on), C_iss and C_rss
along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power
supply designs.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
700V@150℃
1.3A
< 9Ω
Top View
TO-220
D
G
D
S
G
S
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
V_DS
Gate-Source Voltage
V_GS
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Repetitive avalanche energy ^C
Single plused avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AR
E_AR
E_AS
dv/dt
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
Junction and Storage Temperature Range
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
Thermal Characteristics
T_J, T_STG
T_L
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Maximum Junction-to-Case
Symbol
R_θJA
R_θCS
R_θJC
Maximum
600
±30
1.3
0.9
4
1
15
30
5
41.7
0.3
-55 to 150
300
Typical
55
-
2
Maximum
65
0.5
3
Units
V
V
A
A
mJ
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
1/5
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