AOT12N30 Datasheet, PDF (1/6 Pages) Alpha & Omega Semiconductors – 300V,11.5A N-Channel MOSFET

AOT12N30/AOTF12N30
300V,11.5A N-Channel MOSFET
General Description
The AOT12N30/AOTF12N30 is fabricated using an advanced high voltage MOSFET process that is designed
to deliver high levels of performance and robustness in popular AC-DC applications.By providing low R_DS(on), C_iss
and C_rss along with guaranteed avalanche capability this parts can be adopted quickly into new and existing offline
power supply designs.These parts are ideal for boost converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
Features
V_DS
I_D (at V_GS=10V)
R_DS(ON) (at V_GS=10V)
350V@150℃
11.5A
< 0.42Ω
D
G
Absolute Maximum Ratings T_A=25°C unless otherwise noted
Parameter
Symbol
AOT12N30
AOTF12N30
Drain-Source Voltage
V_DS
300
Gate-Source Voltage
V_GS
±30
Continuous Drain
T_C=25°C
Current
T_C=100°C
Pulsed Drain Current ^C
Avalanche Current ^C
Single pulsed avalanche energy ^G
Peak diode recovery dv/dt
I_D
I_DM
I_AS
E_AS
dv/dt
11.5
11.5*
7.3
7.3*
29
3.8
430
5
T_C=25°C
Power Dissipation ^B Derate above 25^oC
P_D
132
1
36
0.3
Junction and Storage Temperature Range
T_J, T_STG
-55 to 150
Maximum lead temperature for soldering
purpose, 1/8" from case for 5 seconds
T_L
300
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient ^A,D
Maximum Case-to-sink ^A
Symbol
R_θJA
R_θCS
AOT12N30
65
0.5
AOTF12N30
65
--
Maximum Junction-to-Case
R_θJC
0.95
3.5
S
Units
V
V
A
A
mJ
V/ns
W
W/ ^oC
°C
°C
Units
°C/W
°C/W
°C/W
1/6
www.freescale.net.cn